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HMC1126-DIE的基本参数
  • 制造厂商:AD
  • 产品类别:RF放大器
  • 技术类目:宽带分布式放大器
  • 功能描述:GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz
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HMC1126-DIE的产品详情:

The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.

The HMC1126 amplifier inputs/outputs are internally matched to 50 ? facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).

APPLICATIONS

  • Test instrumentation
  • Microwave radios and VSATs
  • Military and space
  • Telecommunications infrastructure
  • Fiber optics
  • HMC1126-DIE的优势和特点:
    • Output power for 1 dB compression (P1dB): 17.5 dB typical
    • Saturated output power (PSAT): 21 dBm typical
    • Gain: 11 dB typical
    • Output third-order intercept (IP3): 28 dBm typical
    • Supply voltage: 5 V at 65 mA
    • 50 ? matched input/output
    • Die size: 2.3 mm × 1.45 mm × 0.05 mm
    HMC1126-DIE具体的完整产品型号参数及价格(美元):

    HMC1126,封装:CHIPS OR DIE,包装形式及数量:托盘,25,工作温度:-55 to 85C,AD官网报价:130.9(100-499个);113.3(1000+个)

    HMC1126-SX,封装:CHIPS OR DIE,包装形式及数量:托盘,2,工作温度:-55 to 85C,AD官网报价:252.51(100-499个);252.51(1000+个)

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    HMC1126-DIE的评估套件:

    HMC1126,封装:CHIPS OR DIE,包装形式及数量:托盘,25,工作温度:-55 to 85C,AD官网报价:130.9(100-499个);113.3(1000+个)

    HMC1126-SX,封装:CHIPS OR DIE,包装形式及数量:托盘,2,工作温度:-55 to 85C,AD官网报价:252.51(100-499个);252.51(1000+个)

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